| DOI | Trouver le DOI : https://doi.org/10.1063/1.4937223 |
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| Auteur | Rechercher : Lefebvre, J.1; Rechercher : Ding, J.1; Rechercher : Li, Z.1; Rechercher : Cheng, F.1; Rechercher : Du, N.1; Rechercher : Malenfant, P. R. L.1 |
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| Affiliation | - Conseil national de recherches Canada
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| Format | Texte, Article |
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| Sujet | Dielectric materials; Hydrophobicity; Hysteresis; Nanotubes; Single-walled carbon nanotubes (SWCN); Thin film transistors; Thin films; Threshold elements; Threshold voltage; Transistors; Device encapsulations; Dielectric stress; Hole conduction; Hysteresis free; Methyl silsesquioxanes; Polyvinylphenol; Threshold gate voltage; Carbon nanotubes |
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| Résumé | We present two examples of carbon nanotube network thin film transistors with strongly hydrophobic dielectrics comprising either Teflon-AF or a poly(vinylphenol)/poly(methyl silsesquioxane) (PVP/pMSSQ) blend. In the absence of encapsulation, bottom gated transistors in air ambient show no hysteresis between forward and reverse gate sweep direction. Device threshold gate voltage and On-current present excellent time dependent stability even under dielectric stress. Furthermore, threshold gate voltage for hole conduction is negative upon device encapsulation with PVP/pMSSQ enabling much improved current On/Off ratio at 0 V. This work addresses two major challenges impeding solution based fabrication of relevant thin film transistors with printable single-walled carbon nanotube channels. |
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| Date de publication | 2015-12-14 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21277404 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 44d4a5d8-ce21-4260-9dca-394e940bc72e |
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| Enregistrement créé | 2016-03-09 |
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| Enregistrement modifié | 2020-04-22 |
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