| DOI | Trouver le DOI : https://doi.org/10.3791/56861 |
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| Auteur | Rechercher : Rashidi, Mohammad1; Rechercher : Vine, Wyatt1; Rechercher : Burgess, Jacob A.J.1; Rechercher : Taucer, Marco; Rechercher : Achal, Roshan1; Rechercher : Pitters, Jason L.1; Rechercher : Loth, Sebastian; Rechercher : Wolkow, Robert A.1 |
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| Affiliation | - Conseil national de recherches du Canada. Nanotechnologie
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| Format | Texte, Article |
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| Résumé | The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics. |
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| Date de publication | 2018-01-19 |
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| Maison d’édition | Journal of Visualized Experiments |
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| Dans | |
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| Autre format | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23003528 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 4e2a3d2c-bd7f-4607-94c3-56d941eb9058 |
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| Enregistrement créé | 2018-07-17 |
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| Enregistrement modifié | 2020-03-16 |
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