| DOI | Trouver le DOI : https://doi.org/10.4028/www.scientific.net/MSF.338-342.1647 |
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| Auteur | Rechercher : MacElwee, T. W.; Rechercher : Bardwell, J. A.1; Rechercher : Tang, H.1; Rechercher : Webb, J. B.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | Dislocation; heterojunction; MBE; microwave; TEM |
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| Résumé | Ammonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitable for electronic applications on sapphire [000] substrates. DC and RF characterization of AlGaN/GaN HEMT devices have been carried out over a temperature range from -40°C to 200°C. The devices characterized were two finger × 50 µm wide designs with measured gate lengths ranging from 1 µm to 3.5 µm. Hall and CV measurements indicate a 2DEG sheet charge density at the AlGaN/GaN heterojunction interface as high as 1.9×10¹³/cm² and 1.5×10¹³/cm² respectively. Low field mobilities in excess of 950 cm²/V×s have been measured. Room temperature measurements for a device with a gate length of 1 µm and Vds set to 10 V exhibited a pinch off voltage of -5 volts. A maximum drain current of 946 mA/mm and a peak transconductance of 160 mS/mm were also measured. The off state drain to source breakdown voltage is 33 volts. Room temperature RF characterization with Vds=10 volts indicate intrinsic device fT and fMAX to be 15.6 GHz and 49.4 GHz respectively. At maximum power dissipation and chuck temperature, the channel temperature is estimated to be >320°C. |
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| Date de publication | 2000 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12327207 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 4fa19ca2-4b14-4e4e-af30-6a7a9e45872b |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-26 |
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