| Auteur | Rechercher : Sachrajda, A.S.1; Rechercher : Feng, Y.2; Rechercher : Kirczenow, G.; Rechercher : Taylor, R.P.1; Rechercher : Johnson, B.L.; Rechercher : Kelly, P.J.2; Rechercher : Zawadzki, P.1; Rechercher : Coleridge, P.T.2 |
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| Affiliation | - Conseil national de recherches du Canada
- Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, July 17-30, 1994, II Ciocco, Lucca (Italy) |
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| Résumé | One of the most common procedures employed in the fabrication of semiconductor nanostructures is the split-gate technique, first developed by (1986). Submicron metallic gates are deposited on top of the semiconductor crystal [usually about 90 nm above the two dimensional electron gas (2DEG)] and are used to electrostatically define the nanostructure. Electrical contact is easily made to these ‘top’ gates in a region away from the nanostructure where they can be widened enough to accommodate the connecting wire. This technique allows important experimental parameters (such as potential barrier heights) to be controlled by varying the applied gate voltage. It has led to the observation of several novel effects including the quantization of the conductance of quantum point contacts (Wharam et al., 1988; van Wees et al., 1988). Recently we have added a new element to the split gate technology, i.e. the ability to contact ‘isolated’ submicron gates (or alternatively isolated ohmic contacts) (Feng et al., 1993). |
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| Date de publication | 1995 |
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| Dans | |
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| Série | |
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| Langue | anglais |
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| Numéro NPARC | 12339344 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 51c2a030-fe8a-412f-b7d2-7100a9bd257d |
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| Enregistrement créé | 2009-09-11 |
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| Enregistrement modifié | 2020-04-29 |
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