| DOI | Trouver le DOI : https://doi.org/10.1063/1.104454 |
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| Auteur | Rechercher : Rowell, N. L.1; Rechercher : Noël, J. P.1; Rechercher : Houghton, D. C.1; Rechercher : Buchanan, M.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | Electroluminescence has been observed from Si1−xGex/Si p-n heterostructures grown by molecular beam epitaxy and fabricated into mesa diodes. The luminescence from each sample was observed at temperatures up to 80 K with diodes forward biased at current densities up to 50 A/cm2. For x=0.18 and x=0.25, broad (∼80 meV) electroluminescence peaks were observed at 890 and 860 meV, respectively. These energies as well as the peak shapes and quantum efficiencies (∼1%) were the same as those from corresponding photoluminescence spectra. |
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| Date de publication | 1991-03-04 |
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| Dans | |
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| Langue | anglais |
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| Numéro du CNRC | NRC-INMS-1128 |
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| Numéro NPARC | 8897158 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 533d3cb7-cd4e-4fc5-a752-c44e9edfe1e9 |
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| Enregistrement créé | 2009-04-22 |
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| Enregistrement modifié | 2020-03-17 |
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