DOI | Trouver le DOI : https://doi.org/10.1088/1742-6596/400/4/042046 |
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Auteur | Rechercher : Meng, S.; Rechercher : Yaraskavitch, L.; Rechercher : Sachrajda, A. S.1; Rechercher : Kycia, J. B. |
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Affiliation | - Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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Format | Texte, Article |
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Conférence | 26th International Conference on Low Temperature Physics (LT26), August 10-17 2011, Beijing, China |
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Sujet | Charging energies; Induced charges; Josephson coupling energies; Low temperatures; Periodic function; Quantum fluctuation; Superconducting single-electron transistors; Switching currents; Low temperature effects; Low temperature engineering; Quantum electronics; Superconductivity; Single electron transistors |
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Résumé | We experimentally investigated the switching current Isw of a superconducting single electron transistor (sSET), with competitive Josephson coupling energy EJ and charging energy Ec, in an in situ tunable dissipative environment. At low temperature, averaged Isw shows a clear 1e periodic function of gate induced charge on the island. The relative contrast of this oscillation increases when EJ/Ec is lowered. Increasing dissipation reduce the quantum fluctuations of the phase across the sSET, leading to an increased Isw. © Published under licence by IOP Publishing Ltd. |
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Date de publication | 2012-12-17 |
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Dans | |
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Langue | anglais |
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Publications évaluées par des pairs | Oui |
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Numéro NPARC | 21270118 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 56e38daf-f599-4fbb-9574-c499cb631e62 |
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Enregistrement créé | 2014-01-03 |
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Enregistrement modifié | 2020-04-21 |
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