| DOI | Trouver le DOI : https://doi.org/10.1016/S0968-4328(96)00048-0 |
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| Auteur | Rechercher : Robertson, Mark1; Rechercher : Corbett, J.; Rechercher : Webb, James2 |
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| Affiliation | - Conseil national de recherches du Canada. Institut d'innovation en piles à combustible du CNRC
- Conseil national de recherches du Canada. Institut Steacie des sciences moléculaires du CNRC
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| Format | Texte, Article |
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| Sujet | bilayer; crystal growth; diffraction contrast; electron diffraction; electron microscopy; high resolution; InAlSb; InSb; magnetron sputter epitaxy; semiconductor; superlattice |
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| Résumé | High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and the physical structure has been characterized by transmission electron microscopy. It was found that single layers of InAlSb, whose thicknesses greatly exceeded the equilibrium critical thickness, could be grown coherently on (001) InSb for Al concentrations approaching 13-15%. Also, it was observed that planar defects increased in density for both the bilayer and superlattice structures as the Al concentration increased. |
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| Date de publication | 1997-04 |
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| Dans | |
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| Numéro NPARC | 12327315 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 59b66e27-c422-4e43-9940-cf0b51cab5e2 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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