| Téléchargement | - Voir le manuscrit accepté : Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission (PDF, 1.1 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1016/j.jcrysgro.2008.12.040 |
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| Auteur | Rechercher : Skierbiszewski, C.; Rechercher : Wasilewski, Z.R.1; Rechercher : Grzegory, I.; Rechercher : Porowski, S. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | A3. Molecular beam epitaxy; B1. Nitrides; B3. Laser diodes |
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| Résumé | We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600–700 °C. In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE. |
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| Date de publication | 2009-03-15 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Non |
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| Numéro NPARC | 16891232 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 68bc6749-e376-499f-aa04-677bacceb0ca |
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| Enregistrement créé | 2011-03-26 |
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| Enregistrement modifié | 2020-04-16 |
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