DOI | Trouver le DOI : https://doi.org/10.1063/1.124442 |
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Auteur | Rechercher : Dupont, E.1; Rechercher : Liu, H. C.1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1; Rechercher : St-Germain, D.; Rechercher : Chevrette, P. |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Sujet | aluminium compounds; CCD image sensors; focal planes; gallium arsenide; III-V semiconductors; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; photoconductivity; photodetectors; quantum well devices; spontaneous emission |
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Résumé | This letter presents the recent developments of large-area focal plane "pseudo" arrays for infrared (IR) imaging. The devices are based on the epitaxial integration of an n-type mid-IR (8–10 μm) GaAs/AlGaAs quantum-well detector with a light-emitting diode. The increase of spontaneous emission by the midinfrared-induced photocurrent is detected with a charge-coupled device camera in the reflection configuration. The mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion. |
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Date de publication | 1999-06-01 |
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Dans | |
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Langue | anglais |
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Numéro NPARC | 12327907 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 6c71bbcb-b581-4a36-bf3d-48e3db988a78 |
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Enregistrement créé | 2009-09-10 |
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Enregistrement modifié | 2020-03-20 |
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