| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-386-255 |
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| Auteur | Rechercher : Tao, Y.1; Rechercher : Landheer, D.1; Rechercher : Hulse, J.E.1; Rechercher : Xu, D.-X.1; Rechercher : Quance, T.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1995 MRS Spring Meeting: Symposium O: Ultraclean Semiconductor Processing Technology and Surface, April 17-19, 1995, San Francisco, California, USA. |
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| Résumé | We have prepared thin SiO2 layers on Si(100) wafers by electron cyclotron resonance chemical vapour deposition (ECR-CVD) in a multi-chamber ultra-high vacuum (UHV) processing system. The oxides were characterized in-situ by single wavelength ellipsometry (SWE) and x-ray photoelectron spectroscopy (XPS) and ex-situ by Fourier transform infra-red spectroscopy (FTIR), spectroscopic ellipsometry (SE) and capacitance-voltage (CV) electrical measurements. Films deposited at higher pressures, low powers and low silane flow rates had excellent physical and electrical properties. Films deposited at 400 °C had better physical properties than those of thermal oxides grown in dry oxygen at 700 °C. A 1 minute anneal at 950 °C reduced the fast interface state density from 1.2×1011 to 7×1010 eV−1cm−2 |
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| Date de publication | 1995-01-01 |
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| Dans | |
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| Série | |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12327401 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 730ffdcd-285f-4a9c-95c2-3ad666f4c992 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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