| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-399-413 |
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| Auteur | Rechercher : Lafontaine, H.1; Rechercher : Houghton, D.C.1; Rechercher : Bahierathan, B.; Rechercher : Perovic, D.D.; Rechercher : Baribeau, J.-M.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1995 MRS Fall Meeting: Symposium D: Evolution of Epitaxial Structure and Morphology, November 27-December 1, 1995, Boston, Massachusetts, U.S.A. |
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| Résumé | Several Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3. |
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| Date de publication | 1996-07-02 |
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| Série | |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12327236 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 76b224bc-090a-48fc-b90f-4d37e7ee82ea |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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