| DOI | Trouver le DOI : https://doi.org/10.1117/12.876196 |
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| Auteur | Rechercher : Poole, P.J.1; Rechercher : Dalacu, D.1; Rechercher : Lapointe, J.1; Rechercher : Kam, A.1; Rechercher : Mnaymneh, K.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, January 25-26, 2011, San Francisco, CA, USA |
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| Sujet | Au particles; Catalyst-free; Catalyst-free growth; CBE; e-Beam lithography; Growth conditions; Growth modes; InAs quantum dots; InP; InP wafers; Lift-off process; Liquid solids; Mask layer; Nano-meter scale; Optical emissions; quantum dot; Selective area growth; Self-aligned; VLS growth; Catalysis; Catalysts; Chemical beam epitaxy; Gold coatings; Indium arsenide; Semiconductor quantum dots; Silicon compounds; Nanowires |
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| Résumé | We describe two different approaches to growing precisely positioned InP nanowires on InP wafers. Both of these approaches utilize the selective area growth capabilities of Chemical Beam Epitaxy, one using the Au catalysed Vapour-Liquid-Solid (VLS) growth mode, the other being catalyst-free. Growth is performed on InP wafers which are first coated with 20 nm of SiO 2. These are then patterned using e-beam lithography to create nanometer scale holes in the SiO 2 layer to expose the InP surface. For the VLS growth Au is then deposited into the holes in the SiO 2 mask layer using a self-aligned lift-off process. For the catalyst-free growth no Au is deposited. In both cases the deposition of InP results in the formation of InP nanowires. In VLS growth the nanowire diameter is controlled by the size of the Au particle, whereas when catalyst-free the diameter is that of the opening in the SiO 2 mask. The orientation of the nanowires is also different, <111>B when using Au particles and <111>A when catalyst-free. For the catalysed growth the effect of the Au particle can be turned off by modifying growth conditions allowing the nanowire to be clad, dramatically enhancing the optical emission from InAs quantum dots grown inside the nanowire. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE). |
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| Date de publication | 2011 |
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| Maison d’édition | SPIE |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21271061 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 7c5e7cb9-83b5-4989-8648-f339e69efdaf |
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| Enregistrement créé | 2014-03-24 |
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| Enregistrement modifié | 2020-04-21 |
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