| DOI | Trouver le DOI : https://doi.org/10.1063/1.3639292 |
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| Auteur | Rechercher : Siekacz, M.; Rechercher : Sawicka, M.; Rechercher : Turski, H.; Rechercher : Cywiski, G.; Rechercher : Khachapuridze, A.; Rechercher : Perlin, P.; Rechercher : Suski, T.; Rechercher : Bokowski, M.; Rechercher : Smalc-Koziorowska, J.; Rechercher : Kryko, M.; Rechercher : Kudrawiec, R.; Rechercher : Syperek, M.; Rechercher : Misiewicz, J.; Rechercher : Wasilewski, Z.1; Rechercher : Porowski, S.; Rechercher : Skierbiszewski, C. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | Dissociation rates; GaN substrate; Green laser; Higher temperatures; Indium content; InGaN quantum wells; Laser structures; Lasing conditions; Lasing wavelength; Nitrogen fluxes; Optical qualities; Optically pumped; Piezo-electric fields; Plasma assisted molecular beam epitaxy; Dissociation; Electric fields; Epitaxial growth; Gallium nitride; Growth temperature; Indium; Molecular beam epitaxy; Pumping (laser); Quantum well lasers; Semiconductor quantum wells; Optically pumped lasers |
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| Résumé | We report on optically pumped lasing at 500 nm on InGaN laser structures grown by plasma assisted molecular beam epitaxy. The InGaN laser structures were grown under group III-rich conditions on bulk (0001) GaN substrates. The influence of the nitrogen flux and growth temperature on the indium content of InGaN layers was studied. We demonstrate that at elevated growth temperatures, where appreciable dissociation rate for In-N bonds is observed, the indium content of InGaN layers increases with increasing nitrogen flux. We show that growth of InGaN at higher temperatures improves optical quality of InGaN quantum wells, which is crucial for green emitters. The influence of piezoelectric fields on the lasing wavelength is also discussed. In particular, the controversial issue of partial versus complete screening of built-in electric field at lasing conditions is examined, supporting the former case. © 2011 American Institute of Physics. |
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| Date de publication | 2011 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21271376 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 807cf13b-d693-4c89-81f3-814d0f539ebc |
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| Enregistrement créé | 2014-03-24 |
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| Enregistrement modifié | 2020-04-21 |
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