| DOI | Trouver le DOI : https://doi.org/10.1021/nl303327h |
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| Auteur | Rechercher : Dalacu, Dan1; Rechercher : Mnaymneh, Khaled2; Rechercher : Lapointe, Jean1; Rechercher : Wu, Xiaohua1; Rechercher : Poole, Philip J.1; Rechercher : Bulgarini, Gabriele; Rechercher : Zwiller, Val; Rechercher : Reimer, Michael E. |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
- Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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| Format | Texte, Article |
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| Sujet | Nanowire; Qauntum dot; InAs/InP; Single photon source; Chemical beam epitaxy; Selective-area VLS growth |
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| Résumé | We report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor–liquid–solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at λ 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 μeV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher. |
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| Date de publication | 2012-11-14 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21268908 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8104ff01-7bd2-49e9-9d30-d866f6b9a0b1 |
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| Enregistrement créé | 2013-11-25 |
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| Enregistrement modifié | 2020-04-21 |
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