| DOI | Trouver le DOI : https://doi.org/10.1017/S143192761500882X |
|---|
| Auteur | Rechercher : Hayashida, Misa1; Rechercher : Gunawan, Lina; Rechercher : Malac, Marek1; Rechercher : Pawlowicz, Chris; Rechercher : Couillard, Martin2 |
|---|
| Affiliation | - Conseil national de recherches du Canada. Nanotechnologie
- Conseil national de recherches du Canada
|
|---|
| Format | Texte, Article |
|---|
| Conférence | Microscopy & Microanalysis 2015, August 2-6, 2015, Portland, Oregon, United States |
|---|
| Résumé | As semiconductor industries have implemented three dimensional (3-D) structures in order to improve device performance, i.e., to decrease power requirement and to lower current leakage, a conventional 2-D TEM cross-section is no longer sufficient to visualize the structure of a device. Electron Tomography (ET) provides more comprehensive representation in comparison to conventional 2-D cross section TEM images. Electron tomography allows for object visualization of practical interest at sub-nm resolution in 3D. For undistorted rendering and accurate measurement of object dimensions the data must be acquired over the entire ±90° tilt range and the accuracy of the alignment of the projected images must be better than the desired resolution of the reconstructed volume [1]. Here we discuss high resolution ET investigation of semiconductor devices using nano-dot fiducial markers on samples without a missing wedge. |
|---|
| Date de publication | 2015-08-01 |
|---|
| Maison d’édition | Cambridge University Press |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Publications évaluées par des pairs | Oui |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | 81f82cab-a0b4-47d7-8a42-684311aab471 |
|---|
| Enregistrement créé | 2020-01-21 |
|---|
| Enregistrement modifié | 2024-05-15 |
|---|
