| DOI | Trouver le DOI : https://doi.org/10.1149/05301.0185ecst |
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| Auteur | Rechercher : Lockwood, David J.1; Rechercher : Rowell, Nelson L.1; Rechercher : Barbagiovanni, Eric G.; Rechercher : Goncharova, Lyudmila V.; Rechercher : Simpson, Peter J.; Rechercher : Berbezier, Isabelle; Rechercher : Amiard, Guillaume; Rechercher : Favre, Luc; Rechercher : Ronda, Antoine; Rechercher : Faustini, Marco; Rechercher : Grosso, David |
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| Affiliation | - Conseil national de recherches du Canada. Science des mesures et étalons
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| Format | Texte, Article |
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| Conférence | 223rd ECS Meeting, 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications, May 12-17, 2013, Toronto, ON, Canada |
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| Sujet | Absolute intensity; Efficiency curves; Energy dependence; Near-infrared bands; Photoluminescence efficiency; Self-assembled Ge quantum dots; Thermal-annealing; Transmission electron; Atomic force microscopy; Germanium; Graphene; Molecular beam epitaxy; Photoluminescence; Size distribution |
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| Résumé | Self-assembled Ge quantum dots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy either on a thin porous TiO2 layer grown on SiO2 on Si(001) or directly on the SiO2 layer itself. For samples with dot diameters ranging from 10 to 35 nm, the dot photoluminescence (PL) appeared primarily as a wide near-infrared band peaked near 800 meV. The peak energy of the PL band reflects the average dot size and its shape depends on the dot size distribution. Using tight binding and effective mass theoretical models, we have analyzed the PL spectrum in terms of the dot size distribution. The observed size distribution determined from transmission electron and atomic force microscopy allowed the determination of the nonlinear increase in the PL efficiency with decreasing dot diameter. Although the absolute intensities of the PL from the samples vary, the calculated efficiency curves are all well fitted by straight lines on a log-log plot, with essentially the same slope for all samples, thereby demonstrating that under the weak confinement regime investigated here there is a universal power-law increase in PL efficiency with decreasing dot size. Knowing this generic PL efficiency, we show that it is possible to evaluate the size distribution of Ge dots from their PL energy dependence. |
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| Date de publication | 2013 |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21270418 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8934a368-0a5d-46cb-82c2-f40664ee75a4 |
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| Enregistrement créé | 2014-02-10 |
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| Enregistrement modifié | 2020-04-22 |
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