| Téléchargement | - Voir la version de l’auteur : Modeling of ultrafast metal–semiconductor–metal photodetectors (PDF, 24.1 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1139/p91-085 |
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| Auteur | Rechercher : Landheer, D.1; Rechercher : Li, Z.-M.1; Rechercher : Mcalister, S. P.1; Rechercher : Aruliah, D. A. |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | We have simulated the transient response of metal–semiconductor–metal (MSM) photodetectors to an optical impulse, using a two-dimensional (2-D) drift-diffusion model that incorporates deep traps and appropriate boundary conditions. We incorporate the external circuit using a method originally developed to describe photoconductors in transmission lines. Initially a one-dimensional (1-D) simulation is used to verify our model comparing our results to previous 1-D calculations and experimental results for GaAs MSM detectors. Then a full 2-D analysis is used to predict the performance of a novel MSM wave-guide photodetector whose structure incorporates a Si–Si0.5Ge0.5 strained-layer superlattice. We show that this device can have a response as fast as 50 ps, although pulse pile-up due to slow diffusion of carriers may be a problem at high duty cycles. |
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| Date de publication | 1991-03 |
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| Maison d’édition | National Research Council of Canada. NRC Research Press |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23003879 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8a173fb3-14aa-4f69-828c-82c033e48c09 |
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| Enregistrement créé | 2018-08-20 |
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| Enregistrement modifié | 2023-01-05 |
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