| DOI | Trouver le DOI : https://doi.org/10.1116/1.587868 |
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| Auteur | Rechercher : Lu, Z. H.1; Rechercher : Graham, M. J.1; Rechercher : Tay, S. P.; Rechercher : Jiang, D. T.; Rechercher : Tan, K. H. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, Scottsdale, Arizona, USA, January 8-12, 1995 |
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| Sujet | CHARGE STATES; ELECTRONIC STRUCTURE; INTERFACE STATES; OXIDATION; PHOTOEMISSION; SILICON; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000 - 4000 K; TEMPERATURE RANGE 400 - 1000 K |
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| Résumé | Synchrotron radiation photoemission spectroscopy (PES) has been used to study thermal SiO2/Si(100) interfaces. Oxides were grown at 700, 800, 900, and 1000 °C and etched back to a thickness ~ 0.5舑1.5 nm for PES measurements. Comparison of Si 2p core levels with in situ ultrahigh vacuum-grown SiO2 on Si(100) indicated that various Si oxidation states, Six + , are present at the interface. The results show that the amount of both Si2 + and Si3 + increases with increasing oxidation temperature while the amount of Si1 + remains constant. For these furnace grown oxides, structural relaxation to relieve strains rather than kinetic growth considerations governs the structure and suboxide distribution at the SiO2/Si(100) interface. |
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| Date de publication | 1995 |
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| Série | |
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| Langue | anglais |
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| Numéro NPARC | 12338639 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8a3f89c2-f1fa-431b-a03c-8196002c89ed |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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