| DOI | Trouver le DOI : https://doi.org/10.1117/12.2609954 |
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| Auteur | Rechercher : Obhi, Ras-Jeevan K.; Rechercher : Schaefer, Sebastian; Rechercher : Valdivia, Christopher E.; Rechercher : Poole, Philip J.1; Rechercher : Liu, Jiaren1; Rechercher : Lu, Zhenguo1; Rechercher : Hinzer, Karin |
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| Affiliation | - Conseil national de recherches du Canada. Électronique et photonique avancées
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| Format | Texte, Affiche |
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| Conférence | Photonic and Phononic Properties of Engineered Nanostructures XII, January 22 - February 28, 2022, San Francisco, United States |
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| Résumé | The emission wavelength of self-assembled quantum dashes can be controlled by their height. Uncapped InAs/InGaAsP/InP quantum dashes are found to have two distinct heights, which we have measured with atomic force microscopy and denoted the plateau and the peak heights. These heights range from 0.50 nm to 2.35 nm. Under the same growth conditions, for increasing uncapped quantum dash heights we observe an increase in the photoluminescence peak emission wavelength from approximately 1535 to 1543 nm for the capped layers. A growth temperature of 520°C is determined to achieve uniform height distribution for 1550 nm emission using chemical beam epitaxy. |
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| Date de publication | 2022-03-05 |
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| Maison d’édition | SPIE |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 984b687f-cf69-47ee-a49b-33321bbb7878 |
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| Enregistrement créé | 2024-01-26 |
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| Enregistrement modifié | 2024-01-26 |
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