| DOI | Trouver le DOI : https://doi.org/10.1016/j.jcrysgro.2011.10.006 |
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| Auteur | Rechercher : Pitts, O. J.1; Rechercher : Benyon, W.1; Rechercher : Goodchild, D.1; Rechercher : Springthorpe, A. J.1 |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
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| Format | Texte, Article |
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| Conférence | 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18), July 31 to August 5, 2011, Monterey, California, U.S.A. |
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| Sujet | Diffusion; Metalorganic chemical vapor deposition; Metalorganic vapor phase epitaxy; Organometallic vapor phase epitaxy; Semiconducting indium phosphide |
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| Résumé | We study diffusion of zinc into InP in a multiwafer OMVPE reactor using dimethylzinc as the diffusant source. The resulting diffusion profiles are measured by electrochemical capacitance–voltage profiling and by secondary ion mass spectrometry and compared with cleaved cross-sections imaged by scanning electron microscopy. Very good uniformity of the diffusion profile is achieved, with variation across a 3 in. wafer as little as 5%. The dependence of the diffusion depth and Zn concentration on the diffusion temperature, partial pressure of dimethylzinc, and diffusion time are reported. We observe an enhancement of the diffusion depth in area-selective diffusion of planar devices, compared to the depth obtained for blanket diffusion. |
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| Date de publication | 2012-08-01 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Identificateur | S0022024811008335 |
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| Numéro NPARC | 21268783 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 988768e6-e2a2-4d1d-884b-e56145ccffc4 |
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| Enregistrement créé | 2013-11-12 |
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| Enregistrement modifié | 2020-04-21 |
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