| DOI | Trouver le DOI : https://doi.org/10.1017/S143192761501199X |
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| Auteur | Rechercher : Hayashida, Misa1; Rechercher : Ogawa, Shinichi; Rechercher : Malac, Marek1 |
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| Affiliation | - Conseil national de recherches du Canada. Nanotechnologie
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| Format | Texte, Article |
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| Conférence | Microscopy & Microanalysis 2015, Aug 2-6, 2015, Portland, Oregon, United States |
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| Résumé | Interface roughness of buried layers in nano-meter size devices often degrades performance of the devices because the roughness of the interfaces might affect expected growth of consequent layers during the device fabrication. To characterize the roughness of an exposed surface, atomic force microscope (AFM) has been widely used. On the other hand, when the interfaces are buried by additional device layers, it is impossible to measure the interface roughness by AFM. In this study, we present quantitative measurement of buried interface roughness by electron tomography using a STEM. The presented method allows to characterize interface roughness of the devices with a resolution of 1 nm. |
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| Date de publication | 2015-08-01 |
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| Maison d’édition | Cambridge University Press |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 9a04e334-5df3-4af2-b2c5-17fff17006e2 |
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| Enregistrement créé | 2020-01-21 |
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| Enregistrement modifié | 2024-05-15 |
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