| DOI | Trouver le DOI : https://doi.org/10.1063/1.1377857 |
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| Auteur | Rechercher : Liu, Hui1; Rechercher : Cheung, I. V.; Rechercher : Springthorpe, Anthony1; Rechercher : Dharma-Wardana, M1; Rechercher : Wasilewski, Zbigniew1; Rechercher : Lockwood, David1; Rechercher : Aers, Geoffrey1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | gallium arsenide; aluminium compounds; quantum well lasers; semiconductor quantum wells; III-V semiconductors; raman lasers; optical pumping; laser transitions; phonons |
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| Résumé | An intersubband Raman laser has been realized in an artificial GaAs/AlGaAs three-level quantum-well structure. A CO2 laser in resonance with the one-to-three level transition is used as the pump, while the lasing emission occurs via the three-to-two level transition. The one-to-two level spacing is designed to be in resonance with the AlAs-like longitudinal optical phonon mode, favoring the Raman process. This work presents an alternative mechanism for realizing intersubband lasers and opens up new possibilities in reaching the far infrared region and achieving room-temperature operation. |
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| Date de publication | 2001-04-16 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12744785 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 9f9def82-ac86-4832-8b26-980011d13c0b |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-03-27 |
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