| DOI | Trouver le DOI : https://doi.org/10.1103/PhysRevB.71.125308 |
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| Auteur | Rechercher : Lopinski, G. P.1; Rechercher : Eves, B. J.1; Rechercher : Hul'ko, O.1; Rechercher : Mark, C.1; Rechercher : Patitsas, S. N.1; Rechercher : Boukherroub, R.1; Rechercher : Ward, T. R.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut Steacie des sciences moléculaires du CNRC
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| Format | Texte, Article |
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| Sujet | chemisorbed layers; chemisorption; chlorine; electron beam effects; electron energy loss spectra; elemental semiconductors; Hall effect; inversion layers; nanotechnology; silicon; surface conductivity; two-dimensional hole gas |
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| Résumé | Chlorine termination of low-doped, n-type Si(111) is found to lead to an increase in conductance relative to the hydrogen-terminated surface. This increase is attributed to formation of an inversion layer due to the strongly electron withdrawing character of the chemisorbed chlorine. The presence of this inversion layer is confirmed by high resolution electron energy loss spectroscopy and Hall effect measurements. Electron beam irradiation destroys the inversion layer, suggesting a route to nanoscale patterning of this 2D hole gas. |
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| Date de publication | 2005-03-15 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12328087 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | a084727a-9346-4541-91ff-67797d5dd44f |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-07 |
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