| Résumé | The properties of ZrO2 films deposited using molecular oxygen and a recently developed precursor, zirconiumZr(Oi–Pr)2(thd)2 have been investigated. The organometallic was dissolved as a 0.15 molar solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390 °C–550 °C. Carbon concentrations, <0.1 at. %, the detection limit of the x-ray photoelectron spectroscopy depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the films to be polycrystalline as deposited, with a zirconium silicate interfacial layer. After proper annealing treatments, an equivalent oxide thickness (EOT) of around 2.3 nm has been achieved for a 5.2 nm thick film, with a leakage current two orders of magnitude lower than that of SiO2 with the same EOT. Promising capacitance–voltage characteristics were also achieved, but some improvements are required if these films are to be used as a gate insulator. |
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