| DOI | Trouver le DOI : https://doi.org/10.1116/1.5140364 |
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| Auteur | Rechercher : Ma, Rubin1; Rechercher : Lapointe, Jean1; Rechercher : Storey, Craig1; Rechercher : Poole, Philip1; Rechercher : Jiang, Frank2; Rechercher : Seyfollahi, Alireza2; Rechercher : Walker, Alexandre W.1Identifiant ORCID : https://orcid.org/0000-0002-1791-2140; Rechercher : Noël, Jean-Paul1; Rechercher : Kam, Alicia1; Rechercher : Densmore, Adam2 |
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| Affiliation | - Conseil national de recherches du Canada. Électronique et photonique avancées
- Conseil national de recherches du Canada. Herzberg en astronomie et en astrophysique
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| Format | Texte, Article |
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| Résumé | In this work, the authors evaluated the access resistance of InP high electron mobility transistors (HEMTs) and their degradation during wafer processing. The transfer resistance, which was rarely separated from other components of the total access resistance of InP HEMTs in the literature, was found to be the dominant component of the access resistance. It was also found that the transfer resistance degraded during wafer processing. The selection of the ohmic metal stack and its impact on both the metal-cap contact resistance and the transfer resistance was also investigated. The observations in their experiments and relevant discussions in the report are expected to be useful in the identification of improvement opportunities in both material growth and wafer fabrication of InP HEMTs. |
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| Date de publication | 2020-03-16 |
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| Maison d’édition | AIP Publishing |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | a6bd8274-28cb-4ae5-9187-9e3cf7f947e6 |
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| Enregistrement créé | 2020-07-06 |
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| Enregistrement modifié | 2021-09-17 |
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