| DOI | Trouver le DOI : https://doi.org/10.1063/1.366644 |
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| Auteur | Rechercher : Liu, H. C.1; Rechercher : Li, L.1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1; Rechercher : Brown, G. J.; Rechercher : Szmulowicz, F.; Rechercher : Hegde, S. M. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | aluminium compounds; dark conductivity; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells |
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| Résumé | We report on a systematic study of a set of GaAs/AlGaAs p-type quantum well infrared photodetectors with varying barrier heights. The detector cutoff wavelength decreases with increasing barrier height. Experimental photoresponse spectra are in good agreement with calculated ground-state to continuum absorption spectra, based on a multiband envelope-function model. The measured dark current decreases with increasing barrier height. An estimate of the low-field dark current gives good agreement with the measured dark current. |
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| Date de publication | 1998-01-01 |
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| Dans | |
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| Numéro NPARC | 12334523 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | a7855219-771a-41f8-8896-b9b46c15bd7a |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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