| DOI | Trouver le DOI : https://doi.org/10.1063/1.114823 |
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| Auteur | Rechercher : Charbonneau, S.1; Rechercher : Poole, P. J.1; Rechercher : Feng, Y.1; Rechercher : Aers, G. C.1; Rechercher : Dion, M.1; Rechercher : Davies, M.1; Rechercher : Goldberg, R. D.; Rechercher : Mitchell, I. V. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | energy gap; gallium arsenides; gallium phosphides; indium arsenides; indium phosphides; ion implantation; mixing; quantum efficiency; quantum wells; semiconductor lasers; threshold current; tuning |
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| Résumé | The technique of ion-induced quantum well intermixing using broad area, high energy (1 MeV P⁺ ) ion implantation has been used to tune the emission wavelength of an InGaAs/InGaAsP/InP multiple quantum well (MQW) laser operating at 1.5 �m. The optical quality of the band-gap shifted material is assessed using low-temperature photoluminescence (PL). The band-gap tuned lasers are characterized in terms of threshold current density and external quantum efficiency and exhibit blue shifts in the lasing spectra of up to 63 nm. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating active as well as passive optoelectronic devices. |
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| Date de publication | 1995-11-13 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12328305 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | aa5ab9fd-9a62-41d7-b984-7495e3a0be5f |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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