| DOI | Trouver le DOI : https://doi.org/10.1149/1.1836699 |
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| Auteur | Rechercher : Landheer, Dolf1; Rechercher : Tao, Ye1; Rechercher : Hulse, John1; Rechercher : Quance, Terrence1; Rechercher : Xu, D-X |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | chemical vapour deposition; cyclotron resonance; Fourier transform spectroscopy; nitridation; oxygen compounds; plasma deposited coatings; plasma diagnostics; silicon compounds |
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| Résumé | High-quality silicon dioxide films with nitrogen at the Si/SiO2 interface have been produced by plasma-enhanced chemical vapor deposition using an electron-cyclotron resonance source with silane and nitrous oxide. The nitride layer, which amounts to approximately one monolayer, is produced by a plasma nitridation process that dominates over chemical vapor deposition during the initial stages of growth. X-ray photoelectron spectroscopy has been used to show that the nitrogen atoms are bonded to three silicon atoms and the N[Single Bond]O bond concentration is below the detection limit. Fourier transform infrared spectroscopy indicates that the films have excellent bulk properties. Interface state densities of 2 � 1011 eV�1 cm�2 have been obtained by capacitance-voltage analysis of aluminum capacitors. We discuss the prospects for reducing this level by optimizing the process. |
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| Date de publication | 1996-04-30 |
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| Dans | |
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| Numéro NPARC | 12328299 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | aeecfb9c-8ce9-4c94-9759-ddb25237a8b8 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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