Absolute characterization of photoluminesence from pulsed-laser deposited, sol-gel, sputtered and evaporated ZnO thin films

Par Conseil national de recherches du Canada

DOI	Trouver le DOI : https://doi.org/10.1002/pssc.200881352
Auteur	Rechercher : Taschuk, M. T.¹; Rechercher : Laforge, J. M.¹; Rechercher : Nguyen, H.; Rechercher : Sun, Y. W.; Rechercher : Kursa, P.; Rechercher : Decorby, R. G.; Rechercher : Brett, M. J.¹; Rechercher : Tsui, Y. Y.
Affiliation	Conseil national de recherches du Canada. Nanotechnologie
Format	Texte, Article
Résumé	ZnO thin films were fabricated using PLD, sputtering, e‐beam evaporation and sol‐gel techniques. The films were annealed in an oxygen environment to improve their crystallinity. Photoluminescence efficiency and angular emission patterns were characterized and are reported in absolute radiometric units. Conversion efficiencies in the range of 1 – 7 · 10‐6 were found for the PLD films, 7 · 10‐6 for a sputtered film, 7 – 40 · 10‐6 for the e‐beam evaporated films, and 20 – 400 · 10‐6 for the Sol‐Gel films. In most cases, the angular emission pattern of the photoluminescence was lambertian in nature. Non‐lambertian emission patterns were observed for some films with microstructure, achieved with PLD and e‐beam evaporation.
Date de publication	2009-05
Maison d’édition	Wiley
Dans	Physica Status Solidi C: Current Topics in Solid State Physics 6, nº S1 : S131–S134.
Langue	anglais
Publications évaluées par des pairs	Oui
Numéro NPARC	23004463
Exporter la notice	Exporter en format RIS
Signaler une correction	Signaler une correction (s'ouvre dans un nouvel onglet)
Identificateur de l’enregistrement	b0672b8e-0ec6-493c-bd8f-ad1a7d893a0c
Enregistrement créé	2018-11-07
Enregistrement modifié	2020-04-16

Date de modification :: 2024-06-30