| DOI | Trouver le DOI : https://doi.org/10.1016/j.mee.2010.11.045 |
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| Auteur | Rechercher : Mohammad, M. A.; Rechercher : Dew, S. K.; Rechercher : Evoy, S.1; Rechercher : Stepanova, M.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut national de nanotechnologie
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| Format | Texte, Article |
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| Sujet | Doubly Clamped Cantilevers; HSQ; Hydrogen Silsesquioxane; Nanomechanical resonators; Silicon Carbon Nitride; Sub-10 nm; Electron beams; Electron optics; Electron beam lithography |
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| Résumé | In this work, we report the fabrication of sub-10 nm wide, doubly-clamped silicon carbon nitride (SiCN) resonators of up to 5 μm lengths. An existing resonator fabrication process has undergone a major improvement through the use of a single hydrogen silsesquioxane (HSQ) masking layer for SiCN patterned using electron beam lithography. Novel development strategies, comprising hot development and HF-trimming development, were also used. The crucial role of post-exposure resist processing in improving the resonator resolution and uniformity was demonstrated. Application of the optimized lithographic process has allowed us to claim the narrowest suspended bridge structures of several microns in length achieved to date. © 2011 Elsevier B.V. All rights reserved. |
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| Date de publication | 2010-12-05 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21271955 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | b4c676dc-af10-4489-b8a8-673d652ad4a5 |
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| Enregistrement créé | 2014-05-13 |
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| Enregistrement modifié | 2020-04-17 |
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