| DOI | Trouver le DOI : https://doi.org/10.1063/1.4772643 |
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| Auteur | Rechercher : Liu, X. Z.; Rechercher : Yu, G.; Rechercher : Wei, L. M.; Rechercher : Lin, T.; Rechercher : Xu, Y. G.; Rechercher : Yang, J. R.; Rechercher : Wei, Y. F.; Rechercher : Guo, S. L.; Rechercher : Chu, J. H.; Rechercher : Rowell, N. L.1; Rechercher : Lockwood, D. J.1 |
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| Affiliation | - Conseil national de recherches du Canada. Science des mesures et étalons
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| Format | Texte, Article |
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| Sujet | Anti-localization effects; Gate voltages; High mobility; High-electron-density; Interband coupling; Magneto-transport measurement; P-type; Rashba effects; Rashba spin orbit interaction; Rashba spin splitting; Weak antilocalization; Carrier concentration; Electron density measurement; Electron gas; Inversion layers |
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| Résumé | The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd 0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (∼3.0-6.0 × 1015 m-2), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system. © 2013 American Institute of Physics. |
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| Date de publication | 2013 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21269890 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | bacfa18b-eae6-47e1-848b-64cfb7ec023f |
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| Enregistrement créé | 2013-12-13 |
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| Enregistrement modifié | 2020-04-22 |
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