| DOI | Trouver le DOI : https://doi.org/10.12693/APhysPolA.106.367 |
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| Auteur | Rechercher : Wysmolek, A.; Rechercher : Chwalisz, B.; Rechercher : Potemski, M.; Rechercher : Stepniewski, R.; Rechercher : Babinski, Adam1; Rechercher : Raymond, S.; Rechercher : Thierry-Mieg, V. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewmum in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron--hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells. |
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| Date de publication | 2004 |
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| Dans | |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12346377 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | bd332ed4-12d1-4912-b99f-bb9902a2d3f7 |
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| Enregistrement créé | 2009-09-17 |
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| Enregistrement modifié | 2020-04-17 |
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