DOI | Trouver le DOI : https://doi.org/10.1557/PROC-798-Y5.67 |
---|
Auteur | Rechercher : Tay, Li-Lin1; Rechercher : Lockwood, David J.1; Rechercher : Gupta, James A.1; Rechercher : Wasilewski, Zbig R.1 |
---|
Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
---|
Format | Texte, Article |
---|
Conférence | 2003 MRS Fall Meeting - Symposium Y – GaN and Related Alloys, 1-5 December 2003, Boston, Massachusetts, USA |
---|
Résumé | Pseudomorphically strained epitaxial films of the ternary alloy GaNyAs1-y have been grown on GaAs(100) with y ranging from 0 to 0.05. The optical phonon Raman spectrum of the alloy displays a two-mode behavior. The GaAs-like first order modes are represented at y = 0.05 by the strong longitudinal optic (LO1) mode at 288.5 cm-1 and the weaker transverse optic (TO1) mode at 268.3 cm-1, while the GaN-like LO2 mode is observed at 474.8 cm-1. Two very broad disorder-induced acoustic bands are evident at 80 and 170 cm-1 due to atomic disorder within the crystalline network. Raman studies show that as the nitrogen concentration increases, the GaAs-like LO1 band shifts linearly towards lower wavenumber while the GaN-like LO2 phonon band displays a sub-linear increase in wavenumber. Raman results for the unstrained quaternary alloy In0.06Ga0.94N0.02As0.98 are compared with those of GaN0.02As0.98. |
---|
Date de publication | 2004 |
---|
Dans | |
---|
Série | |
---|
Langue | anglais |
---|
Numéro NPARC | 12346656 |
---|
Exporter la notice | Exporter en format RIS |
---|
Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
---|
Identificateur de l’enregistrement | c0f89f29-b13e-43ce-ad94-b0298f7f24e4 |
---|
Enregistrement créé | 2009-09-17 |
---|
Enregistrement modifié | 2020-04-17 |
---|