| DOI | Trouver le DOI : https://doi.org/10.1149/05304.0003ecst |
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| Auteur | Rechercher : Lockwood, David J.1; Rechercher : Wu, Xiaohua2; Rechercher : Baribeau, Jean-Marc2; Rechercher : Mala, Selina A.; Rechercher : Modi, Nikhil; Rechercher : Tsybeskov, Leonid |
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| Affiliation | - Conseil national de recherches du Canada. Science des mesures et étalons
- Conseil national de recherches du Canada. Technologies de l'information et des communications
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| Format | Texte, Article |
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| Conférence | 223rd ECS Meeting, Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices, May 12-16, 2013, Toronto, ON, Canada |
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| Sujet | Carrier recombination; Electron-hole droplets; Excitation intensity; Ge concentrations; Hetero interfaces; Light emitting devices; Linear dependence; SiGe quantum wells; Nanocrystals; Photonic devices; Semiconductor quantum wells; Silicon alloys; Three dimensional; Germanium |
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| Résumé | Epitaxially-grown three-dimensional Si/SiGe nanostructures (NSs) produce photoluminescence (PL) and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast (PL lifetime <20 ns) and hence more efficient SiGe light-emitting devices. The results presented here demonstrate that in such Si/SiGe 3D NSs with a nominal Ge concentration approaching ∼35% the PL peaked near 0.78 eV strongly depends on the Si/SiGe heterointerface abruptness. In other Si/SiGe NS/quantum-well samples with a Ge concentration approaching ∼40%, we find two PL bands peaked at ∼0.8 eV and ∼0.9 eV at low temperatures. The PL peaked at 0.8 eV rises and decays slowly, and it quickly saturates as the excitation intensity increases. In contrast, the PL peaked at 0.9 eV shows a much shorter lifetime and exhibits a linear dependence versus excitation intensity. The slow/delayed PL at 0.8 eV is attributed to carrier recombination at the SiGe NS/Si transition layer while the faster and more efficient PL at 0.9 eV is associated with SiGe quantum wells. More complicated and similarly fast (∼10-7 s) decays are observed at very high excitation intensities due to electron-hole droplet formation. The physics of carrier recombination in these Si/SiGe NSs is discussed. |
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| Date de publication | 2013 |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21270417 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | c4579eca-6ea0-4023-a30b-b332292e497a |
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| Enregistrement créé | 2014-02-10 |
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| Enregistrement modifié | 2020-04-22 |
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