| DOI | Trouver le DOI : https://doi.org/10.1063/1.371504 |
|---|
| Auteur | Rechercher : Shen, A.; Rechercher : Liu, H.; Rechercher : Szmulowicz, F.; Rechercher : Buchanan, Margaret1; Rechercher : Gao, M.; Rechercher : Brown, G.; Rechercher : Ehret, J. |
|---|
| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
|---|
| Format | Texte, Article |
|---|
| Sujet | aluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; quantum well devices; semiconductor doping |
|---|
| Résumé | Effects of well doping density on the performance of GaAs/AlGaAs p-type quantum well infrared photodetectors are systematically studied. We find that for devices covering the 3–5 µm wavelength region and operating at about 100 K, the optimum two-dimensional doping density is in the range 1–2×1012 cm–2, which maximizes the background limited infrared performance temperature and dark current limited detectivity. Increasing the doping density not only enhances the peak absorption but also broadens the linewidth pronouncedly. |
|---|
| Date de publication | 1999-11-01 |
|---|
| Dans | |
|---|
| Numéro NPARC | 12338479 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | cf701487-2abf-4583-882c-0cb80cca0bb2 |
|---|
| Enregistrement créé | 2009-09-10 |
|---|
| Enregistrement modifié | 2020-03-20 |
|---|
