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Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1063/1.124252
AuteurRechercher : 1; Rechercher : 1; Rechercher : 1; Rechercher : 1
Affiliation
  1. Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
FormatTexte, Article
Sujetaluminium compounds; carbon; carrier density; carrier mobility; electrical resistivity; gallium compounds; high electron mobility transistors; III-V semiconductors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; two-dimensional electron gas; wide band gap semiconductors
Résumé
A method of growing semi-insulating GaN epilayers by ammonia molecular beam epitaxy through intentional doping with carbon is reported. Thick GaN layers of high resistivity are an important element in GaN-based heterostructure field-effect transistors. A methane ion source was used as the carbon dopant source. The cracking of the methane gas by the ion source was found to be the key to the effective incorporation of carbon. High-quality C-doped GaN layers with resistivities greater than 10^6 & #937; cm have been grown with high reproducibility and reliability. AlGaN/GaN heterostructures grown on the C-doped semi-insulating GaN-based layers exhibited a high-mobility two-dimensional electron gas at the heterointerface, with room-temperature mobilities typically between 1000 and 1200 cm²/Vs, and liquid-nitrogen-temperature mobilities up to 5660 cm²/Vs. The carrier density was almost constant, with less than 3% change over the measured temperature range.
Date de publication
Dans
  • Applied Physics Letters 75, nº 7 (1999) : 953–955.
Langueanglais
Numéro NPARC12338084
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Identificateur de l’enregistrementd3a11794-99e4-43e3-b981-959456b12c46
Enregistrement créé2009-09-10
Enregistrement modifié2020-03-20
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