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A Study of Nitrogen Incorporation during the Oxidation of Si(100) in N[sub 2]O at High Temperatures

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1149/1.1836412
AuteurRechercher : 1; Rechercher : 1; Rechercher : 1; Rechercher : 1
Affiliation
  1. Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
FormatTexte, Article
Sujetnitrogen compounds; oxidation; oxygen compounds; quartz; silicon; surface treatment; temperature
Résumé
The oxidation of Si(100) in N2O has been studied at temperatures in the range from 950 to 1200°C using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. During oxidation N became incorporated into the oxide film, the amount increasing with increasing temperature to 1100°C and then falling to a lower value at 1200°C. The N was concentrated as a thin N-rich layer near the SiO2-Si interface inhibiting the influx of oxidant, leading to a reduction in the extent of oxidation compared with that in pure O2. The oxidant species is believed to be NO, which is stable under the conditions of the experiments. The N-rich phase was shown to have a composition of Si3N4 surmounted by N-rich oxynitride.
Date de publication
Dans
  • Journal of The Electrochemical Society 143, nº 1 (31 décembre 1995) : 221–228.
Langueanglais
Numéro NPARC12333582
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Identificateur de l’enregistrementd4563654-b75f-46ae-9024-f355c296b102
Enregistrement créé2009-09-10
Enregistrement modifié2020-04-29
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