| DOI | Trouver le DOI : https://doi.org/10.1016/0168-583X(94)00510-9 |
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| Auteur | Rechercher : Ridgway, M. C.; Rechercher : Elliman, R. G.; Rechercher : Faith, M. E.; Rechercher : Kemeny, P. C.; Rechercher : Davies, M.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP. |
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| Date de publication | 1995-03-01 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12330165 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | da34a606-ef33-43bd-a76a-1107c8d9fdc6 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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