| DOI | Trouver le DOI : https://doi.org/10.1063/1.123855 |
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| Auteur | Rechercher : Tang, H.1; Rechercher : Webb, James B.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | carrier density; electron mobility; gallium compounds; III-V semiconductors; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; X-ray diffraction |
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| Résumé | The growth of high electron mobility GaN on (0001) sapphire by ammonia molecular beam epitaxy is reported. A buffer layer of AlN < 300 Å is initially deposited by magnetron sputter epitaxy, a technique where the aluminum source is a planar dc magnetron sputter cathode and ammonia is used for the nitrogen source. The GaN epilayer is deposited using a conventional K cell for the gallium source and ammonia for the nitrogen source. The layers were doped using silane. Measured room temperature electron mobilities of 560 cm2/V s were observed for layers with carrier densities of ~ 1.5 × 1017 cm – 3. The 4 K photoluminescence spectrum showed a very strong donor bound exciton at 3.48 eV with a full width at half maximum (FWHM) of 4.9 meV. X-ray diffraction studies showed the layers to have good crystallinity with FWHM of the omega–2 theta and omega scans as low as 13.7 and 210 arcsec, respectively. |
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| Date de publication | 1999-04-19 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12329104 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | db5eb3ee-6e9b-481f-948e-7383d3dfaf43 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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