DOI | Trouver le DOI : https://doi.org/10.1109/JQE.2020.3003081 |
---|
Auteur | Rechercher : Lin, YuzheIdentifiant ORCID : https://orcid.org/0000-0002-2315-0066; Rechercher : Li, Lu; Rechercher : Huang, Wenxiang; Rechercher : Yang, Rui Q.Identifiant ORCID : https://orcid.org/0000-0002-4504-4897; Rechercher : Gupta, James A.1; Rechercher : Zheng, Wanhua |
---|
Affiliation | - Conseil national de recherches du Canada. Électronique et photonique avancées
|
---|
Bailleur de fonds | Rechercher : National Science Foundation |
---|
Format | Texte, Article |
---|
Sujet | interband cascade laser; quasi-Fermi level pinning; semiconductor heterostructure; quantum well; temperature measurement; quantum cascade lasers; resistance; threshold current; temperature distribution |
---|
Résumé | A systematic study of the quasi-Fermi level pinning in various interband cascade lasers (ICLs) is reported. These ICLs, with either type-II or type-I quantum well active regions, cover the mid-infrared wavelength range from 3 to 6 µm and can operate in continuous wave (cw) at room temperatures and above. It was found that the quasi-Fermi level can be pinned in many ICLs over a wide range of temperature, which is associated with an observed drop of differential resistance at threshold. For the first time, the quasi-Fermi level pinning was demonstrated in ICLs at room temperature. The temperature dependence of the quasi-Fermi level pinning in ICLs was also examined. A pinning factor is introduced to evaluate how well the quasi-Fermi level is pinned in ICLs with different configurations and lasing wavelengths. Also, it was found that the quasi-Fermi level pinning disappeared in some ICLs where an obvious drop of differential resistance could not be observed at the threshold. Furthermore, the quasi-Fermi level pinning was found to be correlated to the doping concentration in electron injectors in ICLs. Possible mechanisms and implications related to the quasiFermi level pinning are discussed. |
---|
Date de publication | 2020-06-17 |
---|
Maison d’édition | IEEE |
---|
Dans | |
---|
Langue | anglais |
---|
Publications évaluées par des pairs | Oui |
---|
Exporter la notice | Exporter en format RIS |
---|
Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
---|
Identificateur de l’enregistrement | dd7ad354-23ea-4950-9ee8-7813334f5420 |
---|
Enregistrement créé | 2022-06-24 |
---|
Enregistrement modifié | 2022-06-24 |
---|