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Electronic structure of wide-band-gap (AlN)m (GaN)m[001] superlattices

DOITrouver le DOI : https://doi.org/10.1557/PROC-395-473
AuteurRechercher : 1; Rechercher : 1; Rechercher :
Affiliation
  1. Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
FormatTexte, Article
Conférence1995 MRS Fall Meeting: Symposium AAA: Gallium Nitride and Related Materials: the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
Résumé
Wide bandgap III-V nitrides, such as GaN and AlN, have become topical in the near-term technology of blue lasers. We report detailed electronic band-structure calculations for (AlN)m(GaN)n [001] zinc-blende superlattices (SL), with m + n ≤ 12, using the all-electron full-potential linear-muffin-tin-orbital method. For n ≥ 3, the SL are found to have a direct band gap. For n ≤ 2 and m ≥ 3, all the band gaps are indirect. In ultrathin SL, m ≤ 3 and n ≤ 2, only (m, n)= (3,1) is found to have an indirect gap. The band offsets are estimated by calculating the core-level shifts of nitrogen atoms in the central planes of the GaN and A1N layers. The calculated densities of states, electron- and hole- effective masses (m), etc., as a function of m and n, are reported; a remarkable dependence of m on the number of layers is revealed.
Date de publication
Dans
  • 1995 MRS Fall Meeting - Symposium AAA – Gallium Nitride and Related Materials: The First International Symp (1996) : 473–.
Série
  • Materials Research Society Symposia Proceedings, nº 395.
Publications évaluées par des pairsOui
Numéro NPARC12327164
Exporter la noticeExporter en format RIS
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Identificateur de l’enregistrementde511390-f6fc-4e48-bf4e-294393fc235f
Enregistrement créé2009-09-10
Enregistrement modifié2020-03-20

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