| DOI | Trouver le DOI : https://doi.org/10.1149/05301.0215ecst |
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| Auteur | Rechercher : Tsybeskov, L.; Rechercher : Chang, H.-Y.; Rechercher : Mala, S.; Rechercher : Kamins, T.I.; Rechercher : Wu, X.1; Rechercher : Lockwood, D.J.2 |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
- Conseil national de recherches du Canada. Science des mesures et étalons
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| Format | Texte, Article |
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| Conférence | 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting, 12 May 2013 through 17 May 2013, Toronto, ON |
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| Sujet | Axial heterojunctions; Chemical compositions; Lateral expansion; Lattice-mismatched; Partial amorphization; Structural and optical properties; Structural defect; Vapor-liquid-solid techniques; Germanium; Graphene; Heterojunctions; Semiconductor quantum wells; Thermal expansion; Transmission electron microscopy; Vapors; Nanowires |
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| Résumé | In crystalline, dislocation-free, Si/Ge nanowire (NW) axial heterojunctions grown using the vapor-liquid-solid (VLS) technique, transmission electron microscopy (TEM) photoluminescence (PL) and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain due to the difference in Si and Ge thermal expansion is observed. We find, in agreement with theoretical predictions, that the strain can be partially relived by lateral nanowire expansion in the vicinity of the Si/Ge heteroj unction. In addition to the observed nanowire lateral expansion, the lattice mismatched induced strain could be relaxed by other mechanisms including intermixing, formation of structural defects and partial amorphization. The conclusions are supported by analytical TEM measurements. © The Electrochemical Society. |
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| Date de publication | 2013 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21269593 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | de52388a-c038-4653-ad1f-80439c21537e |
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| Enregistrement créé | 2013-12-13 |
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| Enregistrement modifié | 2020-04-22 |
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