| Téléchargement | - Voir le manuscrit accepté : Low temperature Si growth on Si(001): impurity incorporation and limiting thickness for epitaxy (PDF, 762 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1116/1.1650852 |
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| Auteur | Rechercher : Baribeau, J. -M.1; Rechercher : Wu, X.1; Rechercher : Lockwood, D. J.1; Rechercher : Tay, L.1; Rechercher : Sproule, G. I.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | epitaxy; surface impurity levels; thin film growth; activation energies; chemical analysis |
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| Résumé | We present a structural and chemical analysis of high-vacuum deposited Si filmsgrown on clean or oxidized Si (001) wafers by low-temperature molecular-beam epitaxy. For growth on clean Si, we observed a limiting thickness for epitaxy that decreases with decreasing temperature with an activation energy of 0.47 eV. The onset of defect formation is correlated to a peak in the H impurity concentration. The transition to an amorphous phase is, however, observed beyond the depth where impurities are first observed pointing to surface disorder/roughening as a source of epitaxy breakdown. The O and C content in these films remains low until the film crystallinity has strongly deteriorated and reaches a saturation concentration of 2–4 at. % in the fully amorphous regions. The impurity profiles in amorphous-Si filmsgrown on oxidized Si are similar to those obtained on clean Si when grown at the same temperature and indicate that the impurity uptake depends primarily on residual gas and surface condition. Raman scattering results show the structural changes and evolution of the Si bond configuration. |
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| Date de publication | 2004 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12743831 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | ee2650dc-a26d-49c6-942d-7594595af7e0 |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-04-17 |
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