| DOI | Trouver le DOI : https://doi.org/10.1149/1.3578022 |
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| Auteur | Rechercher : Lockwood, D.J.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | Tutorials in Nanotechnology: Focus on Luminescence and Display Materials, Luminescence and Energy Efficiency and Physics and Chemistry of Luminescence and Display Materials - 218th ECS Meeting, 10 October 2010 through 15 October 2010, Las Vegas, NV |
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| Sujet | Ab initio approach; Band gap luminescence; Elemental silicon; Experimental determination; Fundamental band gap; Indirect band gap; Nanocrystallines; Optical technique; Quantum confinement effects; Quantum well; Silicon layer; Silicon nanostructures; Strong confinement; Ultra-thin structures; Amorphous silicon; Energy efficiency; Energy gap; Luminescence; Nanocrystalline silicon; Silicon compounds; Silicon oxides; Semiconductor quantum wells |
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| Résumé | In opto-electronics and photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Amongst a number of diverse approaches to engineering efficient light emission in silicon nanostructures, one system that has received considerable attention has been Si/SiO 2 quantum wells. Engineering such structures has not been easy, because to observe the desired quantum confinement effects, the quantum well thickness has to be less than 5 nm. Nevertheless, such ultra thin structures have now been produced by a variety of techniques. The SiO 2 layers are amorphous, but the silicon layers can range from amorphous through nanocrystalline to single-crystal form. The fundamental band gap of the quantum wells has been measured primarily by optical techniques and strong confinement effects have been observed. A number of theories based primarily on ab initio approaches have been developed to explain these results with varying degrees of success. A detailed comparison is made between theoretical and experimental determinations of the band gap in Si/SiO 2 quantum wells. ©The Electrochemical Society. |
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| Date de publication | 2011 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21271166 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | f702f812-e18a-42bb-bcfa-6d0eedba818c |
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| Enregistrement créé | 2014-03-24 |
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| Enregistrement modifié | 2020-04-21 |
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