| Auteur | Rechercher : Marshall, Gregory M.1; Rechercher : Bensebaa, Farid1; Rechercher : Dubowski, Jan J. |
|---|
| Affiliation | - Conseil national de recherches Canada. Énergie, les mines et l'environnement
|
|---|
| Format | Texte, Article |
|---|
| Conférence | SurfaceAnalysis 2012: American Vacuum Society, Applied Surface Science Division Topical Conference, June 19-22, 2012, Richland, WA, U.S.A. |
|---|
| Sujet | angle-resolved XPS; alkanethiols; SAMs; fractional overlayer; GaAs |
|---|
| Résumé | The compositional schoichiometry and structural morphology of n-alkanethiol self-assembled monolayers (SAMs) formed on the GaAs(001) surface was investigated by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). In order to decompose high resolution ARXPS spectra, synthetic lineshape calibration was first referred to Ar-ion beam sputtered GaAs using low-asymmetry Doniach-Sunjic lineshape profiles. Following SAM formation, the As-S chemical state was located at +1.8 eV from GaAs in the As 3d region in agreement with data following GaAs passivation with inorganic sulphides, and was estimated to represent a bond fraction of 30-50% relative to the total number of S-GaAs bonds. The surface was observed to be Ga-rich, but no Ga-S interface component could be resolved. The surface density of elemental As was quantified using fractional overlayer modeling. A value of 2.9-4.2x1o(14) cm(-2) was obtained, which represents a monolayer fraction of 35-50%. Similarly, fractional overlayer modeling was used to estimate the SAM uniformity, and a value of 92% was achieved. |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Numéro du CNRC | NRC-EME-53093 |
|---|
| Numéro NPARC | 21275976 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | fd76a161-c48c-4f8f-bc48-be775e5613cf |
|---|
| Enregistrement créé | 2015-08-25 |
|---|
| Enregistrement modifié | 2020-04-22 |
|---|
