Free-carrier absorption in Be-and C-doped GaAs epilayers and far infrared detector applications

DOI	Resolve DOI: https://doi.org/10.1063/1.1347002
Author	Search for: Korotkov, A. L.; Search for: Perera, A. G.; Search for: Shen, W. Z.; Search for: Herfort, J.; Search for: Ploog, K. H.; Search for: Schaff, W. J.; Search for: Liu, Hui¹
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Publication date	2001
In	Journal of Applied Physics 89, no. 6 (2001): 3295–3300.
Language	English
Peer reviewed	Yes
NPARC number	12744054
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Record identifier	0161f02e-d6ff-47c5-8126-f64df846b032
Record created	2009-10-27
Record modified	2023-04-17