| DOI | Resolve DOI: https://doi.org/10.1063/1.1492306 |
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| Author | Search for: Boukherroub, Rabah1; Search for: Wayner, Danial D. W.1; Search for: Lockwood, David J.2 |
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| Affiliation | - National Research Council of Canada
- National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | silicon; elemental semiconductors; porous semiconductors; photoluminescence; oxidation; anodisation; organic compounds; surface chemistry; infrared spectra; raman spectra; passivation; anodizing; electrochemical oxidation; hydrogen bonds; infrared spectra; porosity; porous materials; porous silicon; semiconductors (materials); surface reactions; surface treatment |
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| Abstract | Electrochemical oxidation of porous silicon (PSi) produces a surface that is covered with native silicon–hydrogen (Si–Hx) bonds and regions with oxidized Si–Si back-bonds (OSi–Hx). Such anodically oxidized PSi layers were chemically modified using 1-decene under thermal conditions. The hydrosilylation reaction consumes mainly the nonoxidized Si–Hx bonds and yields a surface with oxidized and alkylated regions that were characterized using transmission IR and Raman spectroscopies. The brightest photoluminescence (PL) was obtained when the PSi sample was anodized in 1 M sulfuric acid (H₂SO₄) at 3 mA/cm² for 5 min. The chemical process preserves the PL and the physical properties of the porous layer. The derivatized PSi surfaces are stable in boiling CCl4 and in water. |
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| Publication date | 2002-07 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12744334 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 01e98361-db0a-4c0e-8b64-d4f727a8850b |
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| Record created | 2009-10-27 |
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| Record modified | 2020-03-30 |
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