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Photoluminescence stabilization of anodically-oxidized porous silicon layers by chemical functionalization

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1063/1.1492306
AuteurRechercher : 1; Rechercher : 1; Rechercher : 2
Affiliation
  1. Conseil national de recherches du Canada
  2. Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
FormatTexte, Article
Sujetsilicon; elemental semiconductors; porous semiconductors; photoluminescence; oxidation; anodisation; organic compounds; surface chemistry; infrared spectra; raman spectra; passivation; anodizing; electrochemical oxidation; hydrogen bonds; infrared spectra; porosity; porous materials; porous silicon; semiconductors (materials); surface reactions; surface treatment
Résumé
Electrochemical oxidation of porous silicon (PSi) produces a surface that is covered with native silicon–hydrogen (Si–Hx) bonds and regions with oxidized Si–Si back-bonds (OSi–Hx). Such anodically oxidized PSi layers were chemically modified using 1-decene under thermal conditions. The hydrosilylation reaction consumes mainly the nonoxidized Si–Hx bonds and yields a surface with oxidized and alkylated regions that were characterized using transmission IR and Raman spectroscopies. The brightest photoluminescence (PL) was obtained when the PSi sample was anodized in 1 M sulfuric acid (H₂SO₄) at 3 mA/cm² for 5 min. The chemical process preserves the PL and the physical properties of the porous layer. The derivatized PSi surfaces are stable in boiling CCl4 and in water.
Date de publication
Dans
  • Applied Physics Letters 81, nº 4 (juillet 2002) : 601–603.
Langueanglais
Publications évaluées par des pairsOui
Numéro NPARC12744334
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Identificateur de l’enregistrement01e98361-db0a-4c0e-8b64-d4f727a8850b
Enregistrement créé2009-10-27
Enregistrement modifié2020-03-30
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