| DOI | Resolve DOI: https://doi.org/10.1116/1.588922 |
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| Author | Search for: Coleridge, P. T.1; Search for: Wasilewski, Z.1; Search for: Zawadzki, P.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | heterostructures; quantum Hall effect; temperature range 0−13 K; electron gas; aluminium arsenides; gallium arsenides; molecular beam epitaxy; Shubnikov−De Haas effect; carrier mobility; molecular; atomic; ion; chemical beam epitaxy; III-V semiconductors; charge carriers: generation; recombination; lifetime; trapping; mean free paths |
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| Abstract | GaAs/GaAlAs based two-dimensional electron gas structures, with peak mobilities up to 6.4 million (cm2/V s), have been grown in a V80H molecular beam epitaxy system. Unlike many systems in which layers with ultra-high mobilities have been grown, this is a general purpose machine with 3 inch wafer capability and is used extensively for a variety of other growth projects. Some of the procedures taken to achieve these high mobilities are presented and some of the special considerations involved in transport characterization are discussed. |
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| Publication date | 1996-05 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12330809 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 02070644-bf9e-48ca-b310-3a10404ed030 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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