| DOI | Trouver le DOI : https://doi.org/10.1116/1.588922 |
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| Auteur | Rechercher : Coleridge, P. T.1; Rechercher : Wasilewski, Z.1; Rechercher : Zawadzki, P.1 |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | heterostructures; quantum Hall effect; temperature range 0−13 K; electron gas; aluminium arsenides; gallium arsenides; molecular beam epitaxy; Shubnikov−De Haas effect; carrier mobility; molecular; atomic; ion; chemical beam epitaxy; III-V semiconductors; charge carriers: generation; recombination; lifetime; trapping; mean free paths |
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| Résumé | GaAs/GaAlAs based two-dimensional electron gas structures, with peak mobilities up to 6.4 million (cm2/V s), have been grown in a V80H molecular beam epitaxy system. Unlike many systems in which layers with ultra-high mobilities have been grown, this is a general purpose machine with 3 inch wafer capability and is used extensively for a variety of other growth projects. Some of the procedures taken to achieve these high mobilities are presented and some of the special considerations involved in transport characterization are discussed. |
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| Date de publication | 1996-05 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12330809 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 02070644-bf9e-48ca-b310-3a10404ed030 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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